000 01858cam a2200289 a 4500
999 _c18784
_d18784
001 16717164
003 BD-ChIIU
005 20190804194941.0
008 110401s2013 ii a b 001 0 eng
020 _a9788126556755
040 _cBD-ChIIU
_dBD-ChIIU
041 _aEnglish
082 0 0 _a621.38152
_bS997s 2013
100 1 _aSze, Simon
245 1 0 _aSemiconductor Devices : Physics and Technology
250 _a3rd ed.
260 _aNew Delhi :
_bWiley,
_cc2013.
300 _aix, 582 p. :
_bFig ;
_c25 cm.
500 _aIncludes index.
505 8 _aMachine generated contents note: CHAPTER 0 IntroductionCHAPTER l Energy Bands and Carrier Concentration in Thermal EquilibriumCHAPTER 2 Carrier Transport PhenomenaCHAPTER 3 p-n junctionCHAPTER 4 Bipolar Transistor and Related DevicesCHAPTER 5 MOS Diode and MOSFETCHAPTER 6 Advanced MOSFET and Related DevicesCHAPTER 7 MESFET and Related DevicesCHAPTER 8 Microwave Diodes, Quantum-Effect, and Hot-Electron DevicesCHAPTER 9 LEDs and LasersCHAPTER 10 Photo detectors and Solar CellsCHAPTER 11 Crystal Growth and EpitaxyCHAPTER 12 Film FormationCHAPTER 13 Lithography and EtchingCHAPTER 14 Impurity DopingCHAPTER 15 Integrated Devices.
520 _a"Semiconductor Devices: Physics and Technology, Third Edition is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices"--
590 _aImran Hasan Ramjan
650 0 _aSemiconductors.
650 7 _aTECHNOLOGY & ENGINEERING / Electronics / Semiconductors
700 1 _aLee, Ming-Kwei
942 _2ddc
_cBK